Influence of annealing on polymeric precursor derived ZnO thin films on sapphire
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منابع مشابه
Nano-structural Characterization of Post-annealed ZnO Thin Films by X-ray Diffraction and Field Emission Scanning Electron Microscopy
ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...
متن کاملNano-structural Characterization of Post-annealed ZnO Thin Films by X-ray Diffraction and Field Emission Scanning Electron Microscopy
ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...
متن کاملEffect of annealing and UV illumination on properties of nanocrystalline ZnO thin films
ZnO thin films with preferred orientation along the (002) plane were prepared onto the glass substrates by the sol-gel spin coating method for different post- annealing temperatures. The XRD study confirms that the thin films grown by this method have good crystalline hexagonal wurtzite structure. The optical band gap of the samples was determined from UV-visible spectra. It is found that the s...
متن کاملEffect of annealing and UV illumination on properties of nanocrystalline ZnO thin films
ZnO thin films with preferred orientation along the (002) plane were prepared onto the glass substrates by the sol-gel spin coating method for different post- annealing temperatures. The XRD study confirms that the thin films grown by this method have good crystalline hexagonal wurtzite structure. The optical band gap of the samples was determined from UV-visible spectra. It is found that the s...
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Al-doped ZnO thin films were prepared on the (0001) sapphire (c-Al2O3) substrates by atomic layer deposition (ALD) using alternating pulses of Zn(C2H5)2, Al(CH3)3 and H2O precursors and post-deposition high-temperature annealing. Photoluminescence (PL) spectroscopy showed that the threshold of stimulated emission decreases with increasing Al concentration, from 49.2 kW/cm of the ZnO film to 12....
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تاریخ انتشار 2013